(G. Brunthaler, A.A. Darhuber, H. Straub, J. Stangl, Yan Zhuang, S. Zerlauth, T. Grill, G. Bauer)

Nanostructures defined by holographic lithography or by electron beam lithography were fabricated by reactive ion etching methods. In II-VI heterostructures like CdZnSe/ZnSe photoluminescence of periodic quantum wire and quantum dot patterns was observed down to feature sizes of about 40 nm and analyzed taking into account the elastic relaxation properties of strained nanostructures.

Periodic Si/SiGe structures were so far fabricated by holographic lithography and reactive ion etching and structurally characterized with respect to their elastic strain fields by x-ray diffraction methods.

Furthermore self-organized Ge islands (dots) grown by MBE as multilayers embedded in a Si matrix were studied with respect to their structural properties. For any kind of device application dot multilayers will be required in order to achieve a sufficiently high density in a given volume. The advantage of dots in comparison to two dimensional Si/SiGe structures is the fact that within the Ge dots a much higher strain status can be achieved in comparison to 2D SiGe layers, since the partial elastic relaxation in the three dimensional structures may inhibit the formation of misfit dislocations.

Selected references: [1] – [4]

(E. Wirthl, M. Schmid, H. Sitter, H. Straub, G. Brunthaler)

Several II-VI compounds grown by molecular beam and by atomic layer epitaxy were investigated by quantitative Auger electron spectroscopy. Particularly for ternary and quaternary II-VI compounds, which are indispensable for any realization of a II-VI compounds based heterostructure laser, an exact control of chemical composition is required. Furthermore, in the fabrication process of such devices, reactive ion etch processes are required. In this context a study of the surface composition using depth profiling methods with compounds like ZnSe, CdSe, ZnTe and CdTe was performed, after reactive ion etching using a mixture of CH₄ and H₂. Furthermore the incorporation of oxygen as well as of carbon during these etching steps was studied.

Selected references: [5] – [9]

(M. Helm, P. Kruck, W. Hilber, T. Fromherz, V. Nikonorov)

Si/SiGe as well as GaAs/AlGaAs structures suitable for the investigation of intersubband absorption were fabricated using optical photolithography, reactive ion etching as well as the facilities for preparing contacts.

In p-doped Si/SiGe multi-quantum well structures, the polarization dependence of the intersubband absorption has been investigated theoretically as well as experimentally. A 6x6 Luttinger-Kohn band structure calculation was performed and the theoretical results were applied for the design of a mid-infrared quantum well photodetector (QWIP). The Si/SiGe detector characteristics were investigated and found to be not inferior to those reported previously for p-type GaAs/GaAlAs based QWIP’s.

In asymmetric Si/SiGe MQW structures, the second harmonic frequency generation was studied. A frequency doubling of CO₂ laser radiation could be demonstrated. The optical nonlinearity is due to the asymmetry of the QW structure, which causes a non-linear susceptibility of second order.

In GaAs/GaAlAs superlattices the energy relaxation of hot carriers was investigated by comparing infrared absorption spectra taken at high electric fields at low temperatures with those recorded at different lattice temperatures.

Finally, GaAs/GaAlAs structures for the investigation of the Wannier-Stark effect were fabricated. In sufficiently large vertical electrical fields, minibands split into a ladder, a phenomenon which was studied by infrared absorption.

Selected references: [10] – [14]

(Ch. Penn, F. Schäffler, S. Zerlauth; J. Stangl, A.A. Darhuber, G. Bauer)

Single and multiquantum well structures of Si/Si_1-yC_y, Si/Si_1-xGe_x, Si/Si_1-x-yGe_xC_y, Si_1-xGe_x/Si_1-yC_y/Si were grown by molecular beam epitaxy. Their structural properties were investigated by x-ray rocking curves and their electronic properties were assessed by photoluminescence. Optimum growth temperatures with respect to carbon incorporation and layer quality were found to be around 500 °C.

PL signals from single layers, single quantum wells and multi-quantum wells were observed for carbon contents up to 1.7%. Annealing experiments were performed at temperatures up to 850 °C in order to investigate the thermal stability of the carbon containing structures. Above this temperature the substitutional carbon concentration decreases as evidenced from x-ray diffraction data.

Si_1-xGe_x/Si_1-yC_y/Si multilayers were investigated with respect to their interface roughness using x-ray reflectivity measurements performed at the Optics Beamline of the ESRF, Grenoble. It turned out that the use of a antimony as a surfactant during growth appreciable decreases the interface roughness and results in a substantially longer vertical correlation length.

Selected references: [15] – [18]

(G. Springholz, A.Y. Ueta, G. Bauer)

Using in-situ scanning tunneling microscopy the influence of localized strain fields of misfit dislocations on epitaxial growth has been studied in molecular beam epitaxy. Pronounced surface deformations caused by single dislocations and dislocation reactions were observed, in good agreement with calculations based on elasticity theory. Due to the local reduction of strain energy at the surface above the interfacial dislocations, ridgelike structures are formed, due to stress-driven surface diffusion during MBE growth. These observations prove the preferential epitaxial growth at surface sites above dislocations.

The initial stages of the MBE growth of PbTe on BaF₂ were studied using UHV-STM and atomic force microscopy. The PbTe growth is totally dominated by growth spirals formed around threading dislocations. With increasing layer thickness, due to dislocation annihilation, the threading dislocation density decreases substantially which results in a dramatic increase of the electron mobilities in the layers.

Selected publications: [19] – [22]

The work in the clean rooms in Linz has been further supported by several projects from the FWF, Vienna, the Österreichische Nationalbank, the Projektforschung des BMfWVK, and a research fund from Daimler Benz Research Ulm.

[1] A.A. Darhuber, V. Holy, G. Bauer, P.D. Wang, Y.P. Song, C.M. Sotomayor Torres, M.C. Holland, "Quantitative analysis of elastic strains in GaAs/AlAs quantum dots", Physica B 227, 11 (1996).

[2] H. Straub, G. Brunthaler, W. Faschinger, G. Bauer, C. Vieu, "Photoluminescence of CdZnSe/ZnSe quantum well structures fabricated by reactive ion etching", J. Crystal Growth 159, 451 (1996).

[3] A.A. Darhuber, V. Holy, J. Stangl, G. Bauer, et al., "Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction", Appl.Phys.Lett., in print (Feb.1997).

[4] A.A. Darhuber, J. Stangl, G. Bauer, P. Schittenhelm, G. Abstreiter, "X-ray diffraction and reflection from self-assembled dots", Thin Solid Films, in print.

[5] E. Wirthl, H. Straub, M. Schmid, H. Sitter, P. Bauer, G. Brunthaler, "AES analysis of plasma-etched ZnSe", J.Cryst.Growth 159, 746 (1996).

[6] E. Wirthl, M. Schmid, D. Stifter, H. Sitter, P. Bauer, "Auger investigations on II-VI ternary compound semiconductors", J.Cryst.Res. and Technology 31, 297 (1996).

[7] E. Wirthl, H. Sitter, P. Bauer, "Determination of Auger-sensitivity factors in Zn_1-xMg_xTe for quantitative Surface analysis", Materials Science B, (1997), in print.

[8] E. Wirthl, H. Straub, H. Sitter, G. Brunthaler, M. Schmid, D. Stifter, P. Bauer, "AES investigations of plasma-etched II-VI binary compounds", Proc.Int.Symp. Blue Laser and Light emitting diodes, Chiba, Japan 1996, (Ohmsda Ltd IOS Press Inc.).

[9] S. Ferreira, H. Sitter, R. Krump, W. Faschinger, G. Brunthaler, "Room temperature blue electroluminescence from ZnMgCdSe quaternary system", J. Crystal Growth 159, 640 (1996).

[10] T. Fromherz, P. Kruck, M. Helm, G. Bauer, J.F. Nützel, G. Abstreiter, "TM and TE polarized intersubband absorption and photoconductivity in p-type SiGe quantum wells", Appl.Phys.Lett. 68, 3611 (1996).

[11] P. Kruck, M. Helm, T. Fromherz, G. Bauer, J.F. Nützel, G. Abstreiter, "Medium wavelength normal incidence p-type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K", Appl.Phys.Lett. 69, 3372 (1996).

[12] P. Kruck, M. Seto, M. Helm, Z. Moussa, P. Boucaud, F.-H. Julien, J.-M. Lourtioz, J.F. Nützel, G. Abstreiter, "Second order susceptibilities related to valence band transitions in asymmetric Si/SiGe quantum wells" Solid State Electronics 40, 763 (1996).

[13] W. Hilber, M. Helm, K. Alavi, R.N. Pathak, "Hot-electron power loss in doped GaAs/GaAlAs superlattices measured by infrared differential spectroscopy", Appl.Phys.Lett. 69, 2528 (1996).

[14] W. Hilber, M. Helm, F.M. Peeters, K. Alavi, R.N. Pathak, "Impurity-band and magnetic-filed-induced metal-insulator-transition in a doped GaAs/GaAlAs superlattice", Phys.Rev.B 53, 6919 (1996).

[15] W. Faschinger, S. Zerlauth, G. Bauer, L. Palmetshofer, Appl.Phys.Lett. 67, 3933 (1995).

[16] S. Zerlauth, J. Stangl, A.A. Darhuber, V. Holy, G. Bauer; F. Schäffler, "MBE growth and structural characterization of Si _1-y C_y/Si_1-xGe_x superlattices", J.Cryst.Growth, in print.

[17] J. Stangl, S. Zerlauth, V. Holy, W. Faschinger, G. Bauer, "Reciprocal space mapping of Si_1-xC_x epilayers and Si_n/C/Si_n superlattices", Il Nuovo Cimento, in print.

[18] J. Stangl, A.A. Darhuber, V. Holy, S. Zerlauth, F. Schäffler, G. Bauer, "Interface roughness in pseudomorphic SiGe/SiC superlattices", Proc. Int. Conf. Phys. Semicond., Berlin 1996.

[19] G. Springholz, G. Bauer, V. Holy, Phys.Rev.B 54, 4500 (1996).

[20] G. Springholz, "Strain contrast in scanning tunneling microscopy imaging of surface dislocations in lattice mismatched heteroepitaxy", Applied Surface Science, in print.

[21] G. Springholz, A.Y. Ueta, N. Frank, G. Bauer, Appl.Phys.Lett. 69, 2822 (1996).

[22] G. Springholz, "Surface modifications due to strain relaxation in lattice mismatched heteroepitaxy", Festkörperprobleme, Vol. 35, ed. R. Helbig, Vieweg, Braunschweig/Wiesbaden) Vol.35, p.277 (1996).

Institut für Halbleiterphysik, Johannes Kepler Universität Linz, A-4040 Linz

1. G. Bauer and W. Richter, "Optical characterization of epitaxial semiconductor layers", Springer, 1996.
2. M.A. Herman, H. Sitter: "Molecular beam epitaxy", 2nd revised and updated edition, Springer Series in Mat. Sciences Vol. 7, ed. M. B. Panish, Springer 1996.

1. G. Brunthaler, F. Geist, H. Pascher, N. Frank, G. Bauer: "Interband magnetotransmission and coherent Raman spectroscopy of spin transitions in diluted magnetic Pb_1-xMn_xSe", Phys. Rev. B 53, 3820 (1996).
2. G. Springholz: "Surface modifications due to strain relaxation in lattice-mismatched heteroepitaxy", in: Festkörperprobleme / Advances in Solid State Physics Vol. 35, ed. R. Helbig (Vieweg, Braunschweig/Wiesbaden), p. 277.
3. A.A. Darhuber, V. Holy, G. Bauer, P.D. Wang, Y.P. Song, C.M. Sotomayor Torres, M.C. Holland: "Quantitative analysis of elastic strains in GaAs/AlAs quantum dots", Physica B 227, 11(1996).
4. G. Hendorfer, W. Jantsch, W. Helzel, J.H. Li, Z. Wilamowski, T. Widmer, D. Schikora, K. Lischka: "Strain characterization of HG_1-xFe_xSe-layers by electron spin resonance", Mater. Sci. Forum, in print.
5. M. Shima, L. Salamanca-Riba, G. Springholz, G. Bauer: "Double periodicity formation in EuTe/PbTe superlattices" Mat. Res. Soc. Symp. Proc. 399, 543 (1996)
6. G. Springholz, G. Bauer, V. Holy: "Local surface deformations induced by interfacial misfit dislocations in lattice-mismatched heteroepitaxy of EuTe on PbTe (111)", Surface Science 365, 453 (1996).
7. F. Geist, H. Pascher, M. Kriechbaum, N. Frank, G. Bauer: "Magneto-optical properties of diluted magnetic PbSe/Pb_1-xMn_xSe superlatttices", Phys. Rev. B 54, 4820 (1996).
8. G. Springholz, A.Y. Ueta, N. Frank, G. Bauer: "Spiral growth and threading dislocations for molecular beam epitaxy of PbTe on BaF₂ (111) studied by UHV-scanning tunneling microscopy", Appl.Phys.Lett. 69, 2822 (1996).
9. J. Stangl, A.A. Darhuber, V. Holy, S. Zerlauth, F. Schäffler, G. Bauer: "Interface roughness in pseudomorphic Si_1-xGe/Si_1-yC_y superlattices", Proc. International Conference on the Physics of Semiconductors, Berlin, Germany, July 21 – 26, 1996, to be published.
10. S. Zerlauth, J. Stangl, A.A. Darhuber, V. Holy, G. Bauer, F. Schäffler: "MBE growth and structural characterization of Si_1-yC_y/Si_1-xGe_x superlattices", Proc. 9th International Conference on Molecular Beam Epitaxy, August 5 – 9, 1996, Pepperdine University, Malibu, California, in print; J. Crystal Growth, submitted.
11. G. Springholz, G. Bauer, V. Holy: "Scanning-tunneling-microscopy observation of stress-driven surface diffusion due to localized strain fields of misfit dislocations in heteroepitaxy", Phys. Rev. B 54, 4500 (1996).
12. A.A. Darhuber, J. Stangl, V. Holy, G. Bauer, A. Krost, M. Grundmann, D. Bimberg, V.M. Ustinov, P.S. Kop’ev, A.O. Kosogov, P. Werne: "Structural characterization of self-assembled quantum dot structures by x-ray diffraction techniques", Thin Solid Films, submitted.
13. M. Holzmann, P. Baumgartner, C. Engel, J.F. Nützel, G. Abstreiter, F. Schäffler: "Fabrication of n- and p-channel in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing", Appl. Phys. Lett. 68, 3025 (1996).
14. D. Stifter, H. Sitter: "Thickness correlated effects of the crystal and surface structure of C₆₀ thin films grown on Mica by Hot Wall Epitaxy", Thin Solid Films 280, 83 (1996),
15. D. Stifter, H. Sitter: "Hot wall epitaxy of C₆₀ thin films on Mica and their characterization", Fullerene Science and Technol. 4, 277 (1996).
16. M. A. Herman, H. Sitter: "MBE growth physics: Application to device technology", Microelectronics Journal 27, 257 (1996).
17. K. Wundke, U. Neukirch, J. Gutowski, D. Hommel, S. O. Ferreira, H. Sitter: "Coherent effects in nonlinear absorption of thin ZnSe layers and Zn_1-xCd_xSe/ZnSe quantum wells under resonant excitation", Proc. 10th Int. Conf. Dynamic Processes in the Excited States of Solids, Palm Cove 1995, J.Luminescence 66, 65 (1996).
18. E. Wirthl, H. Straub, M. Schmid, H. Sitter, P. Bauer, G. Brunthaler: "AES analysis of plasma-etched ZnSe", J. Crystal Growth 159, 146 (1996).
19. S.O. Ferreira, H. Sitter, R. Krump, W. Faschinger, G. Brunthaler: "Room temperature blue electroluminescence from the ZnMgCdSe quaternary system", J. Crystal Growth 159, 640 (1996).
20. E. Belas, R. Grill, J. Fronc, A. Toth, P. Höschl, H. Sitter, P. Moravec: "Determination of migration energy of Hg interstitials in (HgCd)Te from ion milling experiments", J. Crystal Growth 159, 1117 (1996).
21. J. Hlavka, I. Ohlidal, F. Vizda, H. Sitter: "New technique of measurement of optical parameters of thin films", Thin Solid Films 279, 209 (1996).
22. E. Wirthl, M. Schmid, D. Stifter, H. Sitter, P. Bauer: "Auger investigations on II-VI ternary compound semiconductors", Proc. Int. Conf. on Ternary and Multinary Compounds, J. Cryst. Res. and Technol. 31, 297 (1996).
23. E. Belas, J. Franc, A. Toth, R. Grill, P. Höschl, H. Sitter, P. Moravec: "Type conversion of p-(HgCd)Te using H₂/CH₄ and Ar reactive ion etching", Semicond. Sci. Technol. 11, 1116 (1996).
24. T. Nguyen Manh, H. Sitter, D. Stifter: Preparation of Pristine and Ba-doped C₆₀ films by hot-wall-epitaxy", in: Fullerenes and Fullerene Nanostructures, eds. H. Kuzmany et al., World Scientific 1996, p. 430 ff.
25. J. Hora, P. Panek, K. Navratil, B. Handlirova, J. Humlicek, H. Sitter, D. Stifter: "Optical response of C₆₀ thin films and solutions", Phys. Rev. B 54, 5106 (1996).
26. I Hernandez-Calderon, J. Luyo, M. Melendez-Lira, M. Garcia-Rocha, O. de Melo, R. Leon, P. Diaz, L. Hernandez, J. Fuentes, H. Sitter: "Optical and structural properties of ZnSe/GaAs interfaces", Appl. Surf. Sci. 112, 1996.
27. J. Luyo, M. Melendez-Lira, M. Garcia-Rocha, O. de Melo, R. Leon, P. Diaz, L. Hernandez, J. Fuentes, H. Sitter, I. Hernandez-Calderon: "Optical and structural characterization of ZnSe/GaAs interfaces", in: The Physics of Semiconductors, ed. M. Scheffler and R. Zimmermann, World Scientific 1996, p. 1067-1070.
28. J. Luyo, E. Lopez-Luna, M. Melendez-Lira, I. Hernandez-Calderon, O. de Melo-Perciva, P. Diaz-Arencibia, R. Leon, J. Fuentes, H. Sitter: "Investigation of the optical and structural properties of MBE-grown ZnSe/GaAs heterostructures", J. Cryst. Growth, Proc. MBE Conf., Malibu 1996.

1. G. Brunthaler, H. Straub, G. Bauer, E. Wirthl and H. Sitter : "Nanostructuring in II-VI compounds by reactive ion etching", International Symposium on II-VI compounds, Würzburg, 28./29 Oct. 1996 (invited).
2. I. Gourgon, H. Mariette, Le Si Dang, N. Pelekanos, C. Vieu, H. Straub, D. Stifter, G. Brunthaler: "Strain Relaxation in CdTe-based Wires and Dots Studied by Photoluminescence" Nanostructure Workshop, Ioffe Institute, St. Petersburg, May 1996 (invited).
3. G. Springholz : "Molecular Beam Epitaxy of Lead Salt Compounds", International Conference on Material Science and Materials Properties for Infrared Optoelectronics (SPIE), 30.9. – 2.10.1996, Uzghorod, Ukraine (invited).
4. G. Springholz: "Scanning Tunneling Microscopy on Semiconductor Heterostructures", Annual Meeting of the Austrian Physical Society, 23 – 27 September 1996, Linz, Austria (invited).
5. G. Springholz : "Misfit Dislocations and their Localized Strain Fields Studied by UHV-Scanning Tunneling Microscopy", Workshop on Semiconductor Growth, Surface Morphology and Quantum Phenomena, 19 – 21 February 1996, Rottach-Egern, Germany (invited).
6. V. Nunez, G. Springholz, T.M. Giebultowiecz, H. Kepa, K.I. Goldman, C.F. Majkrzak, G. Bauer: "Interlayer spin coherence in antiferromagnetic EuTe/PbTe superlattices observed byc polarized neutron diffraction", 9th International Conference on Superlattices and Microstructures, 14 – 19 July 1996, Liège, Belgium.
7. F.Schäffler: "Si-Basierende Heterostrukturen: Grundlagen und Anwendungspotential", Jahrestagung der Österr. Physikal. Gesellschaft, Linz, 23 – 27 September 1996.
8. G. Springholz, G. Bauer, V. Holy: "Einfluß der lokalen Gitterverzerrungen auf das MBE Wachstum von Epitaxieschichten", Spring Meeting of the German Physical Society, 19 – 23 March 1996, Regensburg , Germany.
9. G. Springholz: "Combined STM/AFM study of surface modifications due to misfit dislocation formation in lattice-mismatched heteroepitaxy", 4th European Park Scientific Instruments Users Meeting, 18 – 20 September 1996, Paris, France.
10. G. Springholz, N. Frank, Y. Ueta, V. Holy, G. Bauer: "Misfit dislocation formation induced surface modifications studied by UHV-scanning tunneling microscopy", Annual Meeting of the TMS Society, February 4 – 9, 1996, Anaheim, CA, USA.
11. G. Springholz, F. Köck, Y. Ueta, G. Bauer: "The origin of spiral type growth mode in lattice-mismatched heteroepitaxy", Fall Meeting of the Materials Research Society (MRS), Boston, MA, USA, December 2 – 6, 1996.
12. J. Stangl, S. Zerlauth, V. Holy, W. Faschinger, G. Bauer: "Hochauflösende Röntgenbeugung an Si_1-xC_x Epitaxieschichten und Si_n/C/Si_n Übergittern" (Poster), Frühjahrstagung der Deutschen Physikalischen Gesellschaft, 25 – 29 March 1996, Regensburg, Germany.
13. J. Stangl, S. Zerlauth, V. Holy, W. Faschinger, G. Bauer: "Reciprocal space mapping on Si_1-xC_x epilayers and Si_n/C/Si_n superlattices" (Poster), 3rd European Symposium on X-Ray Topography and High Resolution Diffraction (X-TOP ‘96), April 22 – 24 , 1996, Palermo, Italy.
14. J. Stangl, A.A. Darhuber, V. Holy, S. Zerlauth, F. Schäffler, G. Bauer: "Interface roughness in pseudomorphic Si_1-xGe_x/Si_1-yC_y superlattices" (Poster), 23rd International Coneference on the Physics of Semiconductors (ICPS XXII), July 21 –26, 1996, Berlin, Germany.
15. J. Stangl, A.A. Darhuber, V. Holy, S. Zerlauth, G. Bauer: "Interface roughness in pseudomorphic Si_1-xGe_x/Si_1-yC_y superlattices from x-ray reflectivity" (Poster), E-MRS Group IV "Heterostructures, Physics and Devices", June 4 – 7, Strasbourg, France.
16. H. Straub, G. Brunthaler, W. Faschinger, G. Bauer and C. Vieu: "Strain Relaxation induced Red Shift of the Photoluminescence of CdZnSe/ZnSe Quantum Wires", (Poster), XXV International School on Physics of Semiconducting Compounds, Jaszowiec ‘96, Jaszowiec, Poland.
17. H. Straub, G. Brunthaler, W. Faschinger, G. Bauer, C. Vieu: "Photolumineszenz-Rotverschiebung durch Dehnungsrelaxation in CdZnSe/ZnSe Quantendrähten", Frühjahrstagung der DPG, Regensburg 1996.
18. Z. Wilamowski, W. Jantsch, M. Ludwig and G. Springholz: "Mesoscopic magnetism in short period semiconductor/antiferromagnet superlattices" (poster), 23^rd International Conference on the Physics of Semiconductors, 21 – 26 July 1996, Berlin, Germany.
19. E. Wirthl, H. Straub, H. Sitter, G. Brunthaler, M. Schmid, D. Stifter, P. Bauer: "AES-Investigation of Plasma-Etched II-VI Binary Compounds", Chiba, Japan, March 5 – 7, 1996.
20. A.Y. Ueta, G. Springholz, G. Bauer: "Spiral growth and improved nucleation PbTe on BaF₂ (111)" (poster), 9th International Conference on Molecular Beam Epitaxy, August 3 - 7, 1996, Malibu, USA.
21. A.Y. Ueta, G. Springholz and G. Bauer: "Spiral growth and improved nucleation PbTe on BaF₂ (111)", Jahrestagung der Österr. Physikal. Gesellschaft, Sept. 23 – 27, 1996, Linz, Austria.
22. A.Y. Ueta, G. Springholz, G. Bauer: "Molecular beam epitaxy of PbTe and Pb_1-xEu_xTe: Doping studies", 2^nd International Workshop on MBE Growth Physics and Technology, October 21 – 25, 1996, Warsaw, Poland.
23. A.Y. Ueta, G. Springholz, G. Bauer: "MBE growth and physical properties of PbEuTe", Frühjahrstagung der Deutschen Physikalischen Gesellschaft, 25 – 29 March 1996, Regensburg, Germany.

1. A. Darhuber: "X-ray diffractometry of self-organized low-dimansional systems", in progress.
2. P. Kruck: "Infrared spectroscopy of semiconductor quantum well systems", in progress.
3. H. Seyringer: "Fabrication and characterization of Si based heterostructure devices", in progress.
4. J. Stangl: "X-ray diffraction and reflectivity from semiconductor heterostructures", in progress.
5. H. Straub: "Lateral patterning of II-VI compounds by holographic lithography and reactive ion etching", in progress.
6. S. Zerlauth: "Molecular beam epitaxy of SiGeC", in progress.
7. Y. Zhuang: "Fabrication of laterally structured semiconductor heterolayers", in progress.
8. A.Y. Ueta: "MBE growth and characterization of PbTe/PbEuTe epitaxial layers"
9. E. Wirthl: "Auger electron spectroscopy of RIE etched II-VI structures"
10. D. Stifter: "MBE growth of II-VI based heterostructures"

1. Walter Schottky Institut, TU München, Garching, Germany, Prof. Abstreiter
2. CEA-CNRS Microstructures de Semiconducteurs II-VI, Grenoble, Prof. Mariette
3. Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
4. ESRF Grenoble, Optics Beamline, Dr. A. Freund, Dr. A. Souvorov
5. Institut für Festkörperelektronik,TU Wien
6. Daimler Benz Forschungslaboratorien Ulm, Dr. Presting, Dr. König
7. Universität Bayreuth, Experimentalphysik, Prof. Pascher
8. Nanoelectronics Research Centre, University of Glasgow, Prof. Sotomayor-Torres
9. Heriot Watt University, Department of Physics, Edinburgh, Scotland
10. NIST-Reactor Radiation Division, Gaithersburg, MD, USA
11. Department of Physics, Purdue University, west Lafayette, IN, USA
12. Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
13. Institut für Experimentalphysik, Ateilung Atom- und Kernphysik, Universität Linz
14. University of Warwick, Coventry, England
15. Fraunhofer Institut, Freiburg, Deutschland
16. IBM Watson Research Center, Yorktown Heights, USA
17. Fachbereich Physik, Universität Paderborn, Deutschland