Since 1995, the cleanroom of the MISZ is operated and maintenanced on a regular basis. Main research areas are the state of the art growth of III-V compounds and the processing of these layers resulting in transport and optical devices. Processing steps as lithography, structuring (different etching techniques), planarization and metallization of the different layers and, finally assembling of the different optoelectronic devices are performed on a routine basis. Production of patterned masks is part of the cleanroom facility as well as the deposition of dielectric materials by chemical vapor deposition (PE-CVD). Supplementary to the normal operation and maintenance of the cleanroom and the cleanroom equipment, additional equipment has been installed. Testing of the cleanroom quality and adjustment of parameters (laminar air flow, filters, cooling, humidity…) is done continuously.

(W. Schrenk, N. Finger, A. Köck, M. Haider, M. Socher, E. Gornik)

The demand on semiconductor lasers with determined emission wavelength and/or continuous tunable emission wavelength caused different sophisticated laser concepts. The concept to be investigated is a grating coupled twinguide laser. The two waveguides are the active laser waveguide and a passive waveguide on top of a conventional Fabry-Perot laser structure. The two waveguides with different optical properties are coupled via a grating contradirectional only for one determined wavelength. This mechanism acts as a strong wavelength filter in the laser cavity. Therefore the emission wavelength should not drift dramatically with temperature as typical for Fabry-Perot lasers.

Fig. 1: Ridge with grating (schematic).

Fig. 2: Schematic view of a ring laser.

Thus, narrow ridge lasers with gratings on the top of the ridge are needed. This problem is solved for ridge widths down to about 1 µm and grating periods of several 100 nm. The second step is to add the passive waveguide on a special laser structure with a thin top cladding and to investigate the filter characteristic of the grating coupled waveguides in respect to the theory. This can be done by a test structure with short grating length. Consequently, a ring laser allows the demonstration of the wavelength selection. It should be possible to reduce the mirror-reflectance of the cleaved or etched mirrors to show laser operation based only on feedback via the passive surface waveguide. The technology for etched laser mirrors is also present. The emission wavelength should be tunable by changing the optical properties of the passive waveguide e.g. via the thickness of the passive waveguide. By adding some asymmetry it should also be possible to force light circulation in only one direction in the ring laser. After showing the coupling mechanism with the ring laser the laser concept must be designed for good efficiency. This would probably be no ring laser but a laser with a grating extended over the full laser length and emission at one antireflection coated laser facet while the other facet could be a metallized mirror.

(T. Maier, W. Smola, G. Strasser, E. Gornik)

With the insertion of a carbon doping source in our MBE system at the beginning of the year we began to grow our first laser structures. To facilitate the characterization of the optical and electrical properties of our samples we used a high-quality GaAs/AlGaAs-DH laser structure received from an external source as a laboratory standard. This structure was grown five times, both LED and broad-area laserdiodes were fabricated, and compared to the standard-devices. The increasing cleanness of the MBE system and optimization of the doping levels brought a continuous improvement. Sample #4 was the first to show laser operation, sample #5 displayed thresholds and efficiencies that were at least equal to our standard sample (Fig. 3).

Fig. 3: LI- characteristics of our first broad-area laser diodes compared to a standard device.

The VCSEL structures were grown on n-doped substrates and comprised an n-doped AlGaAs/AlAs bragg-mirror and a DH-GaAs/AlGaAs diode as an active layer. The top mirror was deposited after MBE growth by PECVD and consisted of typically 11 pairs of SiO/SiN. This technique allows a much higher flexibility in the fabrication of the VCSELs compared to the usual all-epitaxial structures, especially the possibility of a post-growth tuning of the resonator to obtain perfect matching of the laser mode and the gain peak.

Fig. 4: Reflectivity of an MBE grown VCSEL-structure and that of the SiO/SiN top-mirror.

Fig. 5: LI-characteristic of a 7 µm diameter VCSEL with the mirrors shown in Fig. 4.

Figure 4 shows the measured reflectivity of a MBE grown structure together with a calculation. The good accordance underlines the high degree of thickness control during MBE growth that has been achieved. Also shown is the measured reflectivity of a dielectric SiO/SiN top-mirror, reaching values of 99 %, thus fulfilling the demands for VCSEL mirrors.Figure 5 shows the LI-plot of a VCSEL with a 7 µm aperture, measured at a repetition rate of 10 KHz and a duty-cycle of 1 %. The lasing wavelength was 870 nm. The high threshold current densities of approximately 20 KAcm^-2 are probably due to a poor current spreading in the p-doped contact layers, resulting in a small mode-gain overlap. By optimizing the doping levels in these layers threshold is expected to be further reduced.

(P.O. Kellermann, A. Köck, N. Finger, E. Gornik)

The surface-mode-emission technique (SME) was successfully applied in the visible red wavelength regime to achieve a single-beam emission via the surface with low beam divergence (0.16° ´ 10°) as well as a single-mode emission in AC and in DC operation with a minimum spectral linewidth of 0.07 nm. The highest sidemode-suppression achieved in AC operation is 19 dB (Fig. 6). With the SME concept the characteristics of a horizontal cavity laser diode (wavelength, emission angle) can be adjusted by changing only the surface parameters (waveguide’s optical thickness, grating period). An optimization of these red GaInP/AlGaInP SME laser diodes towards higher surface emitted power and higher sidemode suppression by contradirectional coupling between the surface- and the lasermode is planned. A diversification of the SME concept to the green regime is under progress, but at present the devices suffer from substantial heating.

Fig. 6: Single-mode emission spectra of a red SME laser diode in AC operation on the left side and in DC operation on the right side.

The first application of a SME laser diode was realized in high resolution radiography using radiochromic film as dosimeter medium. The readout of the film implements radiochromic film dosimeter near the film’s absorption maximum by using a SME laser diode (675 nm). At 675 nm the effective sensitivity of the film is approximately threefold higher than at 633 nm (helium-neon laser densitometer). Very good accuracy, high spatial resolution, and simple assembly of the readout system has been achieved. The beam profiles of the different collimator helmets of the Leksell Gamma Knife^TM (Elekta Inc., Sweden) installed at the University of Vienna, Department of Neurosurgery, were determined experimentally. Shape and full width at half maximum of the profiles obviously correspond with the computer generated data of the dose planning system. The output factor of the collimators, essential for the application of well defined doses, was checked. The inquiries established an output factor of the 4 mm collimator that lies 9 % ±  1 % lower than the adjusted one.

Fig. 7: Measured beam profile of the 4 mm collimator helmet of the Gamma Knife^TM in comparison to the computer generated data.

(S. Gianordoli, A. Köck, E. Gornik)

Excitation and light emission of surface plasmons (SP) represent a method to improve LED performance. To exploit the SP-technique the surface of the investigated LEDs was periodically structured and coated with different metal films. The dependence of the quantum efficiency (QE) and the radiation behavior on the thickness of different metal films (Au, Ag, Al) on cross and hexagonal gratings were investigated. The lowest beam divergence was obtained from a 40 nm thick Ag film on a hexagonal grating and is 17°. The QE for this LED is only 0.22 % due to the reflection of the Au film back into the substrate. The QE without a metal film is 1.4 % to 1.44 %. In addition, photoresist (PR) was spin coated on the metal to stimulate also waveguide modes to increase the QE. The beam divergence broadened but the QE increased to a maximum of 1.37 % for a hexagonal grating with 10 nm thick Au and a 250 nm thick PR-film. In the slope of -30° to 30° the QE is 1 % higher than without metal and PR.

To cancel the decrease of the QE due to the metal backscattering a Bragg-mirror has to be integrated on the substrate side of the LEDs. Together with an optimization of the PR thickness the QE also can be increased.

Fig. 8: Quantum efficiency as a function of gold thickness; the right side shows a far field pattern of the LED.

(N. Seliger, D. Pogany, C. Fürböck, M. Stoisiek, P. Habas, E. Gornik)

Silicon-On-Insulator (SOI) by Direct Wafer Bonding has become an attractive technique for the fabrication of smart power devices. Self-heating effects in such structures are, however, more critical compared to bulk devices due to a reduced heat removal across the buried and trench oxides. We have developed an optical interferometer technique which allows measurements of the transient temperature variations inside and outside the SOI well of these devices. The temperature variation in the Si layer is monitored by the intensity change of an infrared laser beam (l = 1.3 µm) which is focused on the device from the top side (Fig. 9a). A homogeneous temperature increase DT in the Si layer of the thickness L causes an increase in the optical thickness due to the thermooptical effect (dn/dT is the temperature coefficient of the refractive index). Light absorption in the highly doped substrate causes that only the temperature induced variation in the optical thickness of the SOI layer is detected via the reflectivity changes of the Fabry-Perot (F-P) resonator formed by SiO₂ passivation layer/Si layer/SiO₂ buried oxide/Si substrate (Fig. 9b).

Fig. 9: a) Cross section of LDMOSFET with the laser beam indicated; b) Top view of the device with marked laser beam measurement positions.

Fig. 10: Intensity signal measured on LDMOSFET and the corresponding temperature function evaluated from the experiment. The inset shows the calculated Fabry-Perot reflectivity as function of temperature for the SiO₂/Si/SiO₂-multilayer inherent in LDMOSFET.

Heating in the Si active layer is induced by applying short pulses of 20 µs to 100 µs from 0 to 12V to the gate under various drain-to-source biases. From the intensity signals (Fig. 10) measured on different positions we can obtain values for the temperature increase within the device and outside the device.

The temperature from experiment agrees well with results from simulation (Fig. 11).

Fig. 11: Peak temperature measured and simulated at different lateral positions (see Fig. 9b) outside the well (Finite Element Simulation by ANSYS).

(C. Fürböck, N. Seliger, R. Thalhammer, G. Wachutka, E. Gornik)

Insulated Gate Bipolar Transistors are MOS gated devices which have a high turn-off capability of large current densities in the case of short circuit. Laserprober experiments have been performed on 2nd generation SIEMENS IGBTs. To make the transistor accessible to the laserprober technique the collector metallization on the backside has to be prepared. To provide a vertical bipolar current flow, the IGBT has a thin p-doped layer on the backside (see Fig. 12).

Fig. 12: Principle of backside laser-prober technique applied to the IGBT.

Because of this a mechanical removal of the collector metallization is not possible. A newly developed wet-etching technique provides the possibility to remove parts of the metallization film without etching the silicon. Windows of 70 µm and 90 µm in square are defined, and etched in a two-step process. To avoid multiple reflections within the substrate, an antireflection coating consisting of SiN is deposited in the window area.

In the experiments short circuit case 1 is investigated. A high collector-emitter voltage is applied to the device and the gate is switched to U_GE = 15 V for t = 10 µs. To provide sufficient cooling between the pulses a pulse period of 95 ms is chosen. The voltage U_CE is varied from 50 to 300 V.

Fig. 13: Transient phase shift under short circuit operation with collector emitter voltages as parameter and a pulse duration of 10 µs. The inset shows the integral temperature change.

In collaboration with the Lehrstuhl für Technische Elektrophysik a simulation of the IGBTs has been performed. The effect of the window in the collector contact metallization on the device behavior was investigated. To distinguish between the signal contribution from the free-carrier and temperature modulation, we made measurements at a low collector-emitter voltage V_CE. The contribution from the free carrier concentration is in the range of a few mrad. Hence, it can be neglected at higher power dissipation conditions. Results for this second regime (short circuit operation under high emitter-collector voltage) are shown in Fig. 13. The phase shift is approximately proportional to the total heat dissipated inside the device. From the phase shift an integral temperature change is calculated using the temperature dependence of the refraction index dn/dT = 1,6× 10^-4 K^-1. The results are compared with the values from DESSIS simulation, and good agreement has been found.

(D. Pogany, C. Fürböck, N. Seliger, E. Gornik, S. Kubicek, T. Lalinsky)

A noninvasive infrared laser interferometric technique is used to analyze 0.1 µm test technology NMOSFETs and 0.5 µm technology bipolar junction transistors and PMOSFETs from the back side. The functional state and self-heating effect in the devices are probed by measurements of the optical phase changes caused by the free carrier and thermo-optical effects. The optical signal is studied as a function of bias conditions, device operation frequency and lateral distance from the device (Figs. 14 and 15).

Fig. 14: Phase shift due to the free carrier effect as a function of the gate bias. The dashed line shows the simulation data.

Fig. 15: Phase shift as a function of distance from the emitter of a bipolar transistor. The dashed lines are the simulation results.

Numerical simulation based on the optical characteristic matrix representation for a multilayer system is performed to calculate the free-carrier induced phase shift in MOSFETs. The thermo-optical signal is modeled using a Fourier solution of the heat conduction equation and a simple geometric optic approach. The experiments are in good agreement with the simulations and shows the applicability of the laser method to test VLSI circuits.

Fig. 16: Time dependencies of optical intensity for two power values. The laser beam is placed in the sensor active area.

Fig. 17: Optical intensity as a function of dissipated power. The laser beam is positioned on the Schottky diode.

Thermal characteristics of GaAs power sensor microsystem consisting of two cantilever beams are studied by the infrared optical interferometer. Spatial temperature distribution on the cantilever, thermal time constant and power temperature characteristics of the sensor are obtained from time resolved measurements of thermally induced Fabry-Perot optical reflectivity changes (Figs. 16 and 17). A method based on mathematical analysis of the Fabry-Perot intensity peaks is developed to calculate the temperature as a function of time and power. The method is also used to calculate the temperature evolution in smart power devices prepared on silicon-on-insulator (SOI) substrates.

(R. Heer, J. Smoliner, G. Ploner, G. Strasser)

Ballistic Electron Emission Microscopy (BEEM) has been used to perform low temperature studies on MBE grown InAs/GaAs heterostructures. BEEM is a three terminal technique where electrons tunnel between a STM tip (Scanning Tunneling Microscope) and a thin metal-film evaporated on a semiconductor such as Si or GaAs, schematically shown in Fig. 18. The third electrode on the backside of the sample is used to measure the amount of electrons which cross the metal film ballistically and penetrate into the semiconductor.

Originally, BEEM was applied to determine fundamental semiconductor properties such as metal-semiconductor barrier heights, band structure, and hot electron transport effects. Later, BEEM measurements were used to probe subsurface properties of the investigated samples and quantum confined states in a GaAs/AlGaAs double barrier were detected directly. Quantum wires and recently super lattices have also been studied by BEEM.

Fig. 18: Schematically set-up of a BEEM experiment, (a): Band diagram (b): Instrumentation.

BEEM offers the unique possibility of probing subsurface quantum states. Therefore it is important to raise the amount of those electrons which are able to penetrate into the sample, to improve the spectroscopic sensitivity of BEEM.

It is possible to increase the transmission coefficient through the base by more than a factor of 10. The commonly used thin metal film has to be replaced by a MBE grown InAs layer. A passivated InAs cap layer leads to an attenuation length in the regime of 700Å – 900 Å. Compared to a vapor deposited Au film, with an attenuation length of 10 Å, one can see the power of this novel base electrode. In our experiments we could reach the transmission coefficient of 70 Å vapor deposited Au with an 3000 Å InAs cap layer.

Reducing the thickness of the InAs cap layer will lead to a much higher BEEM signal than by the usually used metal film as base electrode, and therefore open a wide spread field of BEEM spectroscopy in the deep subsurface region of samples.

(R. Kersting, R. Hoffmann, K. Unterrainer)

One of the most promising sources for pulsed few-cycle THz radiation are coherent plasmons in semiconductors. Due to the large dipole moment of the coherently oscillating charges intense far-infrared emission is expected.

A fundamentally new plasmon excitation is the coherent oscillation of extrinsic electrons in n-doped GaAs. Initially, the extrinsic electrons are confined between the substrate and the surface depletion region (Fig. 19). Femtosecond laser excitation of the GaAs leads to an ultrafast screening of the depletion field. The electrons respond to this field change which starts their coherent oscillation.

Fig. 19: Left side: Scheme of the excitation process of the coherent electron oscillations. The right side shows correlation data recorded at different doping densities.

Both the excitation and the damping process of the plasmons are investigated in time-resolved experiments on the emitted THz radiation. Figure 19 shows correlation data of the THz pulses. At low doping density an overdamped emission is observed since the oscillation is slower than the damping. According to the plasma frequency increases with the electron concentration, which leads to well pronounced oscillations at higher doping densities. Since the signals show no dependence on excitation density we conclude that the emission results exclusively from the coherent oscillation of the extrinsic electrons.

In all experiments we observe temporally and spatially coherent THz radiation with intensities of up to 100 nW. However, the pulses are damped out after few oscillations. Temperature dependent measurements show that the damping is due to phonon scattering.

(R. Kersting, J.N. Heyman, E. Thaller, K. Unterrainer)

Recent technological innovations tend to use quantum coherence phenomena for novel ultrafast devices. One of the most attractive material systems are semiconductor heterostructures due to their huge oscillator strengths and sharp transition linewidths. In our experiments we use electro-magnetic THz pulses to drive electronic intersubband transitions in modulation doped GaAs quantum wells (QWs). The temporal quantum coherence gets directly visible by the time-dependent polarization of the electrons which follows the THz excitation.

The inset of Fig. 20 shows a scheme of the intersubband states in a modulation doped QW. Electrons which are initially located at the lower quantum level are excited by an ultrashort pulse with a center frequency of about 1.5 THz. This THz beam is transmitted through the sample and time-resolved by mixing it with a half-cycle THz pulse and detecting the superposition.

Fig. 20: Left side: The inset is a scheme of the confined electron states (e1, e2) within the QW. The data show the THz pulse exciting the intersubband transition. Right side: Transient response of the electrons when driven by the THz pulse.

Driving the electrons with the few-cycle THz pulse leads to a transient polarization which counteracts the field of the exciting pulse. Modulating the gate bias of the structure and thus the population of the QWs makes the response of the electrons directly visible. The oscillating signal results from the coherent superposition of the states in the first and second subband. During the first ps the exciting THz pulse leads to an increasing amplitude of the electron oscillation. After the driving pulse decayed the amplitude decreases and shows the free induction decay of the collective mode. The solid line is the result of a two-level model calculation. The good agreement enables us to determine the dielectric function of the isolated electron gas in the quantum system.

(R. Zobl, M. Fuchshuber, K. Unterrainer, E. Gornik)

In recent years various types of semiconductor quantum structures have been studied for emission in the THz range. Here the concept of a parabolic potential well and its plasmonic type of FIR emission is studied under lateral current injection. The most interesting feature of parabolically confined potentials is that they absorb and emit radiation only at the bare harmonic oscillator frequency w ₀, independent of the number of electrons in the well. This is in accordance with Kohn’s theorem which states that cyclotron resonance absorption is unaffected by electron-electron interaction.

Fig. 21: FIR emission of a parabolic quantum well at 0 T and 4 T. The magnetic field shifts the center frequency by about 20 cm^-1. The sample has two top contact pads and a grating coupler.

To investigate the effect of a magnetic field on the FIR emission of the PQW magnetic fields up to 5 T were applied. For a magnetic field direction perpendicular to the layers no CR emission can be observed while the normal intersubband emission almost immediately vanishes even at low magnetic fields. If the magnetic field is applied parallel to the well but perpendicular to the direction of current flow (Fig. 21) CR emission again is not seen whereas a frequency shift of the intersubband radiation is observed starting at magnetic field strengths above 2 T. The shift is attributed to the formation of a strong electric field perpendicular to the well via Hall effect. At 4 T the center frequency of the FIR emission has moved from 50 cm^-1 to 70 cm^-1 accompanied by a decrease in signal intensity of 50 %. The shifted center frequency position still is independent from the laterally applied electric field and the current flow.

(L. Hvozdara, S. Gianordoli, W. Bichl, G. Strasser, P. Kruck, M. Helm, E. Gornik)

Environmental monitoring, medicine, optical communication and many other areas of technology create a field of application for both, coherent and non-coherent emitters for wavelengths from three to 15 microns.

In the structure depicted in Fig. 22 the intersubband radiative transition (3–2) can be achieved. The energy spacing between levels two and three can be tailored so that the corresponding emitted photon belongs to the mid-infrared band. For the achievement of lasing action there must be a population inversion between the level three and the level two established. An LO-phonon transition between level two and level one secures quick emptying of level two and in this way the condition t_(3-2) > t_(2-1) for population inversion is satisfied.

Fig. 22: Calculation of the biased structure. Transition 3–2 is radiative.

I-V characteristics and the photovoltage spectra (Fig. 23) are recorded and the correlation between the self-consistent calculation and the experimental results is found excellent. First attempts to design a laser structure encountered problems with the trade-off between the electrical and the optical properties of the cladding layers.

Fig. 23: Typical transmission and photovoltage spectra.

(C. Rauch, G. Strasser, M. Kast, C. Pacher, W. Boxleitner, E. Gornik)

The technique of hot electron spectroscopy is used to measure the transmission properties of resonant tunneling diodes and semiconductor superlattices at different electric fields.

Fig. 24: Conduction band diagram of a hot electron transistor. The inset shows an SEM picture of the device.

A three terminal is used to generate an energy tunable electron beam by a tunneling barrier that passes the superlattice after traversing a thin highly doped n-GaAs base layer and an undoped drift region. The measured collector current reflects the probability of an injected electron to be transmitted through the superlattice. The transmittance of the superlattice can be measured directly at given superlattice bias conditions by varying the injected current independently from the superlattice bias voltage. When a uniform electric field is applied to the superlattice, the quasi-continuous minibands break up into a ladder of discrete Wannier-Stark states. This localization of the electron wave function has direct consequences on the ballistic electron transport. The structures were grown by molecular beam epitaxy on semi-insulating GaAs substrate, the devices were fabricated using standard lithography. An SEM picture and the conduction band diagram of the device is shown in Fig. 24.

Fig. 25 shows the miniband transmission versus applied electric field at 4.2 K. For negative collector bias (decelerating field) the measured current is proportional to the coherent current since electrons that are scattered within the miniband are accelerated back to the base. In case of positive collector bias we measure the coherent current and the additional field induced incoherent current due to Esaki-Tsu like band transport. Since the coherent current is considered to be symmetric for both bias directions, we are able to distinguish between the coherent and incoherent contribution of the collector current.

Fig. 25: Miniband transmission versus electric field. Coherent (dashed line) and incoherent current (squares) is present.

These experiments demonstrate for the first time the transition from coherent transport to band like scattering induced transport in a superlattice miniband. Furthermore we have determined the scattering time and the coherence length (l_coh = 80 nm) of the electrons in these superlattices.

By making the length of the superlattice close to the mean free path we believe to match the conditions for Bloch oscillations. The realization of a THz laser based on Bloch oscillation is subject of further experiments.

Institut für Festkörperelektronik, Technische Universität Wien

1. M. Helm, W. Hilber, W.Heiss, B.N. Murdin, G. Strasser, E. Gornik, C.J.G.M. Langerak, C.R. Pidgeon: "Energy relaxation of electrons in GaAs/AlGaAs quantum wells and superlattices", Proc. ITQW ‘97, Tainan, Taiwan, 15-18.12.97 (to be published)
2. P. Kruck, M. Helm, G. Strasser, L. Hvozdara, E. Gornik: "Quantum Cascade Electroluminescence in the GaAs/AlGaAs material system", Proc. ITQW ‘97, Tainan, Taiwan, 15-18.12.97 (to be published)
3. G. Strasser, S. Gianordoli, L. Hvozdara, H. Bichl, K. Unterrainer, E. Gornik, P. Kruck, M. Helm, J.N. Heyman: "GaAs/AlGaAs intersubband mid-infrared emitter", Proc. MRS Fall Meeting 1997, Boston, USA, 1-5.12.97
4. G. Strasser, C. Rauch, K. Kempa, E. Gornik: "Ballistic electron transport in semiconductor superlattices", Proc. ISCS24, San Diego (1997), to be published
5. L. Hvozdara, J.N. Heyman, G. Strasser, K. Unterrainer, P. Kruck, M. Helm, E. Gornik: "Characterization of GaAs/AlGaAs mid-infrared emitters", Proc. ISCS24, San Diego (1997), to be published
6. B.N. Murdin, N. Nasser, C.J.G.M. Langerak, W.Heiss, M. Helm, G. Strasser, E. Gornik, S.-C. Lee, I. Galbraith, C.R. Pidgeon: "Intersubband dynamics below the optical energy for single and coupled quantum well systems", Phys. stat. sol. (b) 204, 208 (1997)
7. C. Rauch, G. Strasser, K. Unterrainer, W. Boxleitner, E. Gornik: "Quenching of miniband transport in biased undoped superlattices", Phys. stat. sol. (b) 204, 393 (1997)
8. R. Kersting, K. Unterrainer, G. Strasser, E. Gornik: "Coherent few-cycle THz emission from plasmons in bulk GaAs", Phys. stat. sol. (b) 204, 67 (1997)
9. J. Smoliner, C. Eder, G. Strasser, E. Gornik: "Ballistic electron emission microscopy on quantum wires", Phys. Stat. Sol. (b) 204, 386 (1997)
10. G. Strasser, C. Rauch, E. Gornik: "Current Transport in Multiple Superlattice Structures", Proc. MSS8, Santa Barbara (1997), to be published in Physica B
11. P. Kruck, G. Strasser, M. Helm, L. Hvozdara, E. Gornik: "Quantum Cascade Electroluminescence in GaAs/AlGaAs Structures", Proc. MSS8, Santa Barbara (1997), to be published in Physica B
12. C. Eder, J. Smoliner, R. Heer, G. Strasser, E. Gornik: "Probing of Superlattice Minibands by Ballistic Electron Emission Microscopy", Proc. MSS8, Santa Barbara (1997), to be published in Physica B
13. C. Rauch, G. Strasser, K. Unterrainer, W. Boxleitner, E. Gornik, K. Kempa: "Ballistic Electron Spectroscopy of Vertical Biased Superlattices", Proc. MSS8, Santa Barbara (1997), to be published in Physica B
14. G. Strasser, P. Kruck, M. Helm, J.N. Heyman, L. Hvozdara, E. Gornik: "Mid-infrared electroluminescence in GaAs/AlGaAs structures", Appl. Phys. Lett. 71 (20), 2892 (1997)
15. G. Ploner, J. Smoliner, G. Strasser, M. Hauser, E. Gornik: "Energy levels in quantum wires studied by magnetophonon effect", accepted at Phys. Rev. B. (1997)
16. C. Rauch, G. Strasser, K. Unterrainer, and E. Gornik: "Ballistic electron spectroscopy of semiconductor heterostructures", Basics of semiconductor device technology (1997) ISBN: 3-901578-02-1
17. C. Rauch, G. Strasser, K. Unterrainer, L. Hvozdara, W. Boxleitner, E. Gornik, B. Brill, and U. Meirav: "Hot electron spectroscopy of undoped GaAs/GaAlAs superlattices", Superlattices and Microstructures, Vol. 22 (2), 143 (1997)
18. G. Ploner, J. Smoliner, G. Strasser and E. Gornik: "Transport characterization of quantum wires by magnetophonon and magnetic depopulation experiments", Superlattices and Microstructures, Vol. 22 (2), 249 (1997)
19. C. Rauch, G. Strasser, K. Unterrainer, B. Brill, E. Gornik: "Ballistic Electron Spectroscopy of Vertical Superlattice Minibands", Appl. Phys. Lett. 70 (5), 649 (1997)
20. B.N. Murdin, W.Heiss, C.J.G.M. Langerak, S.-C. Lee, I. Galbraith, G. Strasser, E. Gornik, M. Helm, C.R. Pidgeon: "Direct observation of the LO phonon bottleneck in wide GaAs/AlGaAs quantum wells", Phys. Rev. B 55 (8), 5171 (1997)
21. R. Kersting, K. Unterrainer, G. Strasser, H.F. Kauffmann, E. Gornik: "Few-cycle THz emission from cold plasma oscillations", Phys. Rev. Lett. 79 (16), 3038 (1997)
22. P.O. Kellermann, A. Golshani, A. Köck, E. Gornik, H.-P. Gauggel, R. Winterhoff, M.H. Pilkuhn: "Single-mode and single-beam surface emission from visible red GaInP/AlGaInP laser diodes", Applied Physics Letters Vol. 70 (18), 5.5.1997, USA
23. R. Kersting, K. Unterrainer, G. Strasser, and E. Gornik: "Coherent few-cycle THz emission of cold plasmas", Proceedings of the Quantum Electronics and Laser Science Conf. QELS ‘97,’98, (1997)
24. A. Golshani, P.O. Kellermann, A. Köck, E. Gornik, L. Korte: "Five-wavelength surface emitting laser diode array based on postgrowth adjustment of emission wavelength", Applied Physics Letters Vol. 71 (6), 11.8.1997, USA
25. C. Fürböck, R. Thalhammer, N. Seliger, D. Pogany, G. Deboy, G. Wachuta, E. Gornik: "Lokale Temperaturbestimmungen in Insulated Gate Bipolar Transistoren (IGBTs) mittels Laserdiodentechnik", ÖVE-Schriftenreihe Nr.14,pp.117-122,1997
26. E. Burian, D. Pogany, T. Lalinsý, N. Seliger and E. Gornik: "Thermal Simulation and Characterization of GaAs Micromachined Power Sensor Microsystems", accepted for publication at Eurosensors XI, Warsaw (1997).
27. N. Seliger, D. Pogany, C. Fürböck, P. Habas, E. Gornik and M. Stoisiek: "A Laser Beam Method for Evaluation of Thermal Time Constant in Smart Power Devices", Proc. of ESREF Conf., Microelectr. and Reliab., Vol. 37, No. 10/11, pp. 1727-1730 (1997)
28. N. Seliger, D. Pogany, C. Fürböck, P. Habas, E. Gornik and M. Stoisiek: "A Study of Temperature Distribution in SOI-Smart Power Devices in Transient Conditions by Optical Interferometry", Proc. of ESSDERC, p. 512, Stuttgart (1997).
29. D. Pogany, C, Fürböck, N. Seliger, P. Habas, E. Gornik, S. Kubicek and S. Decoutere: "Optical testing of submicron-technology MOSFETs and bipolar transistors", Proc. of ESSDERC, p. 372, Stuttgart (1997)
30. N. Seliger, C. Fürböck, P. Habas, D. Pogany, and E. Gornik: "Backside-Laserprober Technique for Characterization of Semiconductor Power Devices", Proceedings of the Seminar "Basics and Technology of Electronic Devices", Großarl, Austria, March 1997, pp. 143-147
31. N. Seliger, P. Habas, D. Pogany and E. Gornik: "Time-Resolved Analysis of Self-Heating in Power VDMOSFETs Using Backside Laserprobing", Solid State Electronics, Vol.41, No.9, pp.1285-1292 (1997)
32. D. Pogany, N. Seliger, T. Lalinský, J. Kuzmík, P. Habas, P. Hrkút and E. Gornik: "Study of Thermal Effects in GaAs Micromachined Power Sensor Microsystems by an Optical Interferometer Technique", accepted for publication in Microelectronics Journal, January 1997
33. R. Heer, C. Eder, J. Smoliner, E. Gornik: "A floating electrometer for scanning tunneling microscope applications in the femtoampere range", Rev. Sci. Instruments 68, 4488 (1997)
34. J. Liu, E. Gornik, S. Xu and H. Zheng: "Sequential resonant tunneling through Landau levels in GaAs/AlAs superlattices", Semicond.Sci. Technol. 12, 1422, (1997)
35. D. Pogany and G. Guillot: "Normal and anomalous behaviour of the RTS noise amplitude in forward biased InGaAs/InP photodiodes", Solid State Electronics 41, 547 (1997)
36. K. Unterrainer, B.J. Keay, M.C. Wanke, S.J. Allen, D. Leonard, G. Medeiros-Ribeiro, U. Bhattacharya, M.J.W. Rodwell: "Observation of Shapiro steps and direct evidence of Bloch oscillations in semiconductor superlattices", Inst. Phys. Conf.Ser. 155, 729 (1997)
37. P. Habas: "Analytical Model and Qualitative Analysis of the Interface-Trap Charge Pumping Characteristics of MOS Structure", Proc. of 21st Int. Conf. on Microelectronics (MIEL), Nils(YU), Sept. 1997
38. P. Habas, G. Groeseneken, G. Van den bosch: "Geometric Current Component in Charge-Pumping Measurements", Proc. of 21st Int. Conf. on Microelectronics (MIEL), Nils (YU), Sept. 1997
39. P. Habas, G. Groeseneken, G. Van den bosch, H.E. Maes, and E. Gornik: "Detailed Study of the Parasitic Geometric Current Component in Charge Pumping Measurements: Determination of Relevant Parameters", Proc. of Semiconductor Interface Specialists Conf., Charleston (USA), (1997)
40. P. Habas, I. De Wolf, G. Groeseneken, A. Stesmans and H.E. Maes: "Analysis of Charge Pumping Characteristics of Single Interface Traps", Proc. of Semiconductor Interface Specialists Conf., Charleston (USA) (1997)
41. R. Kersting, J.N. Heyman, G. Strasser, K. Unterrainer: "Coherent volume plasmons in n-doped GaAs", Phys.Rev.B. (submitted)
42. J.N. Heyman, R. Kersting, G. Strasser, K. Maranowski, A.C. Gossard, K. Unterrainer: "Thz time-domain spectroscopy of intersubband plasmons", Proceedings of the Fourth International Workshop on Intersubband Transitions in Quantum Wells, Tainan, Taiwan, December 15th-18th, 1997 (accepted)
43. J.N. Heyman, R. Kersting, K. Unterrainer: "Time-Domain Measurement of Intersubband Oscillations in a Quantum Well", Appl. Phys. Lett., 72, 644 (1998)
44. A. Köck, A. Golshani, R. Hainberger, E. Gornik, L. Korte: "Digital beamsteering from surface emitting laser diodes based on surface-mode emission", in "In-plane semiconductor lasers: from Ultraviolet to Mid-Infrared", Hong.K. Choi, Peter S. Zory, Editors Proc. SPIE 3001, in print (1997)

1. C. Eder, R. Heer, J. Smoliner, G. Strasser, E. Gornik, G. Weimann, G. Böhm: "Sub surface characterization of GaAs/AlGaAs heterostructures by scanning tunneling microscopy", ETH Zürich, 3.11.1997
2. G. Strasser: "Quantum cascade electroluminescence in GaAs/AlGaAs Structures", Workshop on Semiconductor Infrared Detectors and Emitters, National Research Council Canada, Ottawa, 23-25.7.1997
3. J.Smoliner, C. Eder, G. Strasser, E. Gornik: "BEEM on quantum wires", HCIS10 Conference, Berlin, Germany, July 1997
4. R. Kersting, K. Unterrainer, G. Strasser, E. Gornik: "Coherent few-cycle THz emission of cold plasmons", 1997 Quantum Electronics and Laser Science Conf., 18.-23.5.1997, Baltimore, USA
5. G. Strasser, S. Gianordoli, L. Hvozdara, H. Bichl, K. Unterrainer, E. Gornik, P. Kruck, M. Helm, J.N. Heyman: "GaAs/AlGaAs intersubband mid-infrared emitter", MRS (Material Research Society) Fall Meeting 1997, Boston, USA, 1-5.12.97
6. L. Hvozdara, J.N. Heyman, G. Strasser, K. Unterrainer, P. Kruck, M. Helm, E. Gornik: "Characterization of GaAs/AlGaAs mid-infrared emitters", 24. International Symposium on Compound Semiconductors, San Diego 7-11.9.97
7. R. Kersting, K. Unterrainer, G. Strasser, E. Gornik: "Coherent few-cycle THz emission from plasmons in bulk GaAs", 10th Int. Conf. on Hot Carriers in Semiconductors, Berlin, Germany, 28.7-1.8.97
8. C. Rauch, G. Strasser, K. Unterrainer, W. Boxleitner, K. Kempa, E. Gornik: "Hot electron transport in semiconductor quantum heterostructures", 10th Int. Conf. on Hot Carriers in Semiconductors, Berlin, Germany, 28.7-1.8.97
9. P. Kruck, G.Strasser, M. Helm, L. Hvozdara, E.Gornik: "Quantum Cascade Electroluminescence in GaAs/AlGaAs Structures", 8. Conf. on Mod. Semicond. Struct. (MSS8) , Santa Barbara, USA 14-18.7.97
10. C.Eder, J.Smoliner, R.Heer, G.Strasser, E.Gornik: "Probing of Superlattice Minibands by Ballistic Electron Emission Microscopy", 8. Conf. on Mod. Semicond. Struct. (MSS8) , Santa Barbara, USA 14-18.7.1997
11. C. Rauch, G. Strasser, K. Unterrainer, W. Boxleitner, E.Gornik, K. Kempa: "Ballistic Electron Spectroscopy of Vertical Biased Superlattices", 8. Conf. on Mod. Semicond. Struct. (MSS8) , Santa Barbara, USA 14-18.7.1997
12. C. Rauch, G. Strasser, K. Unterrainer, and E. Gornik: "Ballistic electron spectroscopy of semiconductor heterostructures", Basics of semiconductor device technology, Großarl, Austria, 19.3 - 22.3. 1997
13. K. Kempa, P. Bakshi, G. Strasser, K. Unterrainer, C. Rauch, E. Gornik: "Double quantum well structure for coherent plasmon generation", MRS March Meeting 1997, Kansas City, USA
14. J. Smoliner, M. Hauser, C. Eder, G. Strasser, E. Gornik: "Quantum dot structures for STM tips", PHASDOMS 97, Aachen, Germany, 1997
15. G. Strasser: "Coherent and non-coherent electron transport in superlattice structures", Department of Physics, Boston College, Boston, USA, 4.12.97
16. L. Hvozdara, G. Strasser, P. Kruck, M. Helm, K. Unterrainer, E. Gornik: "Wachstum und Charakterisierung von Intersubband-Laser-Strukturen", Österreichische Physikalische Gesellschaft, 47. Jahrestagung, Wien, Austria (9/97)
17. R. Zobl, C. Rauch, L. Hvozdara, G. Strasser, K. Unterrainer, K. Maranowski, A.C. Gossard, E. Gornik: "Halbleiter-Quantenstrukturen als THz-Emitter", Österreichische Physikalische Gesellschaft, 47. Jahrestagung, Wien, Austria (9/97)
18. R. Kersting, J.N. Heyman, G. Strasser, H.F. Kauffmann, K. Unterrainer: "Kohärente THz-Emission von Plasmaoszillationen in Halbleitern", Österreichische Physikalische Gesellschaft, 47. Jahrestagung, Wien, Austria (9/97)
19. M. Hauser, E. Zottl, G. Strasser, E. Gornik: "Nanostrukturierte Schottkydioden für den THz Bereich", Österreichische Physikalische Gesellschaft, 47. Jahrestagung, Wien, Austria (9/97)
20. G. Strasser, C. Rauch, L. Hvozdara, K. Unterrainer, E. Gornik: "Stromtransport in Übergittern verschiedener Periodizität", Österreichische Physikalische Gesellschaft, 47. Jahrestagung, Wien, Austria (9/97)
21. G. Ploner, J. Smoliner, G. Strasser, M. Hauser, E. Gornik: "Charakterisierung von Quantendrähten mittels Magnetophonon Effekt", Österreichische Physikalische Gesellschaft, 47. Jahrestagung, Wien, Austria (9/97)
22. C. Eder, J. Smoliner, R. Heer, G. Strasser, E. Gornik: "Untersuchung von Übergittern mittels Ballistic Electron Emission Microscopy", Österreichische Physikalische Gesellschaft, 47. Jahrestagung, Wien, Austria (9/97)
23. C. Rauch, G. Strasser, K. Unterrainer, K. Kempa, E. Gornik: "Ballistic electron transport in biased semiconductor superlattices", Österreichische Physikalische Gesellschaft, 47. Jahrestagung, Wien, Austria (9/97)
24. G. Strasser, C. Rauch, K. Kempa and E. Gornik: "Ballistic electron transport in semiconductor superlattices", 24. International Symposium on Compound Semiconductors, San Diego 7-11.9.97
25. C. Eder, J. Smoliner, R. Heer, G. Strasser and E. Gornik: "Direct observation of superlattice minibands with ballistic electron emission microscopy", 9th Int. Conf. on STM, Hamburg, Germany, 21. - 25.7.1997
26. G.Strasser, C. Rauch, E.Gornik: "Current Transport in Multiple Superlattice Structures", 8. Conf. on Mod. Semicond. Struct. (MSS8) , Santa Barbara, USA 14-17.7.1997
27. J.Smoliner, C. Eder, G. Strasser, E.Gornik: "Ballistic electron emission microscopy on quantum wires", Proc. HCIS10, Berlin, Germany 1997
28. K. Unterrainer, R. Kersting, J.N. Heyman, G. Strasser, K. D. Maranowski, A.C. Gossard: "Few-Cycle THz Emission from Intersubband Plasmon Oscillation in Parabolic Wells", 8. Conf. on Mod. Semicond. Struct. (MSS8) , Santa Barbara, USA, 14-18.7.1997
29. C. Rauch, G. Strasser, K. Unterrainer, E. Gornik: "Ballistic electron Devices", International workshop on periodic potentials, Les Houches, France (1997)
30. P.O. Kellermann, N. Finger, A. Golshani, A. Köck, W. Schrenk, E. Gornik, H.-P. Gauggel, R. Winterhoff und M.H. Pilkuhn: "Monomodige oberflächenemittierende Laserdioden im sichtbaren Bereich" (Poster), Jahrestagung Österreichische Physikalische Gesellschaft, 22.-26.9.1997, Wien
31. A. Golshani, N. Finger, P.O. Kellermann, A. Köck, W. Schrenk, E. Gornik, L. Korte: "Oberflächenemittierendes monomodiges Halbleiterlaserarray basierend auf Oberflächenmodenkopplung", Jahrestagung Österreichische Physikalische Gesellschaft, 22.-26.9.1997, Wien
32. A. Golshani, P.O. Kellermann, A. Köck, E. Gornik, L. Korte: "Five-wavelength surface emitting laser diode array based on postgrowth adjustment of Surface Mode Emission", IEEE/LEOS 1997 Summer Topicals, 11.-15.8.1997, Montreal, Quebec, Canada
33. A. Golshani, P.O. Kellermann, A. Köck, E. Gornik, L. Korte: "12-Wavelength Array of Single Mode Surface Emitting Laser Diodes Based on Surface Mode Emission", CLEO´97, Optical Society of America: 1997 Conference on Lasers and Electro-Optics, 18.-23.5.1997, Baltimore USA
34. A. Köck, A. Golshani, R. Hainberger, P.O. Kellermann, E. Gornik, L. Korte: "Oberflächenemittierende Laserdioden für WDM-Anwendungen", Fortbildungsseminar der Gesellschaft für Mikroelektronik GMe "Grundlagen und Technologie elektronischer Bauelemente", 19.-22.3.1997, Großarl
35. E. Burian, D. Pogany, T. Lalinsý, N. Seliger and E. Gornik: "Thermal Simulation and Characterization of GaAs Micromachined Power Sensor Microsystems", Eurosensors XI, Warsaw (1997).
36. N. Seliger, D. Pogany, C. Fürböck, P. Habas, E. Gornik and M. Stoisiek: "A Laser Beam Method for Evaluation of Thermal Time Constant in Smart Power Devices", Proc. of ESREF Conf., Microelectr. and Reliab., Vol. 37, No. 10/11, pp. 1727 (1997)
37. C. Fürböck, R. Thalhammer, N. Seliger, D. Pogany, G. Deboy, G. Wachuta, E. Gornik: "Lokale Temperaturbestimmungen in Insulated Gate Bipolar Transistoren (IGBTs) mittels Laserdiodentechnik", Informationstagung Mikroelektronik (1997)
38. N. Seliger, D. Pogany, C. Fürböck, P. Habas, E. Gornik and M. Stoisiek: "A Study of Temperature Distribution in SOI-Smart Power Devices in Transient Conditions by Optical Interferometry", Proc. of ESSDERC, p. 512, Stuttgart (1997).
39. D. Pogany, C, Fürböck, N. Seliger, P. Habas, E. Gornik, S. Kubicek and S. Decoutere: "Optical testing of submicron-technology MOSFETs and bipolar transistors", Proc. of ESSDERC, p. 372, Stuttgart (1997)
40. N. Seliger, C. Fürböck, P. Habas, D. Pogany, and E. Gornik: "Backside-Laserprober Technique for Characterisation of Semiconductor Power Devices", Proceedings of the Seminar "Basics and Technology of Electronic Devices", Großarl, Austria, March 1997, pp. 143-147
41. N. Seliger: "Charakterisierung von Halbleiterbauelementen mittels Laserinterferometrie", Seminar am Lehrstuhl für Technische Elektrophysik, TU München, 10.11.1997.
42. N.Seliger, C. Fürböck, P. Habaš, D. Pogany, and E. Gornik: "Backside-Laserprober Technique for Characterisation of Semiconductor Power Devices", Seminar "Basics and Technology of Electronic Devices", Großarl, Austria, 1997.
43. N. Seliger, D. Pogany, C. Fürböck, E. Gornik, M. Stoisiek: "Zeitaufgelöste Messung der Temperaturverteilung und der Ladungsträgerdichten in Silicon-On-Insulator Leistungsbauelementen mittels Laserinterferometrie", 47. ÖPG Jahrestagung, (1997)
44. C. Fürböck, R. Thalhammer, N. Seliger, G. Deboy, G. Wachuta und E. Gornik: "Lokale Temperaturbestimmung in IGBTs mittels Lasersondentechnik", 47. ÖPG Jahrestagung, (1997)
45. K. Unterrainer, B.J. Keay, M.C. Wanke, S.J. Allen, D. Leonard, G. Medeiros-Ribeiro, U. Bhattacharya, M.J.W. Rodwell: "Observation of Shapiro steps and direct evidence of Bloch oscillations in semiconductor superlattices", Inst. Phys. Conf.Ser. 155, 729 (1997)
46. P. Habas: "Analytical Model and Qualitative Analysis of the Interface-Trap Charge Pumping Characteristics of MOS Structure", Proc. of 21st Int. Conf. on Microelectronics (MIEL), Nils(YU), Sept. 1997
47. P. Habas, G. Groeseneken, G. Van den Bosch: "Geometric Current Component in Charge-Pumping Measurements", Proc. of 21st Int. Conf. on Microelectronics (MIEL), Nils (YU), Sept. 1997
48. P. Habas, G. Groeseneken, G. Van den Bosch, H.E. Maes, and E. Gornik: "Detailed Study of the Parasitic Geometric Current Component in Charge Pumping Measurements: Determination of Relevant Parameters", Proc. of Semiconductor Interface Specialists Conf., Charleston (USA), (1997)
49. P. Habas, I. De Wolf, G. Groeseneken, A. Stesmans and H.E. Maes: "Analysis of Charge Pumping Characteristics of Single Interface Traps", Proc. of Semiconductor Interface Specialists Conf., Charleston (USA) (1997)
50. A. Golshani, E. Gornik and L. Korte: "Single Mode Surface Emitting Laser Diodes based on Surface Mode Emission", June, at Swiss Federal Institute of Technology (EPFL), Lausanne, Swiss (1997)
51. A. Golshani, E. Gornik and L. Korte: "Single Mode Surface Emitting Laser Diodes based on Surface Mode Emission", 19. Aug; Harvard University, Boston, USA (1997)
52. A. Golshani, E. Gornik and L. Korte: "Surface Mode Emission based Single Mode Surface Emitting Laser Diodes; Low Cost Alternatives for WDM-Systems", 17. April, University of British Columbia, Vancouver, Canada (1997)
53. T. Maier, A. Golshani, P.O. Kellermann, N. Finger, A. Köck, E. Gornik: "Ein Array von Oberflächenmode-emittierenden Laserdioden mit unterschiedlichen Wellenlängen", Informationstagung Mikroelektronik 1997, Wien (1997)
54. K. Unterrainer: "Inverse Bloch oscillator", Workshop on "Atoms and Electrons in Periodic and Quasiperiodic Potentials", Les Houches, 27-31 January 1997
55. K.Unterrainer, R. Kersting, J.N. Heyman, G. Strasser, K.D. Maranowski, A.C. Gossard: "Few-cycle THz emission from Intersubband plasmon oscillation in parabolic wells", 8th Int. Conf. on Modulated Semiconductor Structures, 14.-18.7.1997, Santa Barbara, USA
56. J.N. Heyman, R. Kersting, G. Strasser, K. Maranowski, A.C. Gossard, K. Unterrainer: "THz time-domain spectroscopy of intersubband plasmons", Proceedings of the Fourth International Workshop on Intersubband Transitions in Quantum Wells, Tainan, Taiwan, December 15th-18th, 1997
57. R. Kersting: "Konjugierte Polymere: ultraschnelle Relaxations- und Transportprozesse", 10. Jan. 1997, Universität Dortmund, Germany.
58. R. Kersting, K. Unterrainer, G. Strasser, and E. Gornik: "Coherent few-cycle THz emission of cold plasmons", Quantum Electronics and Laser Science Conference, QELS´97, 21. May 1997, Baltimore, USA.
59. R. Kersting, K. Unterrainer, G. Strasser, and E. Gornik: "Coherent few-cycle THz emission from Plasmons in bulk GaAs", International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, 19. July 1997, Berlin, Germany.
60. R. Kersting: "Ultrafast dynamics of excitons in conjugated polymers", Femtochemistry 98, 3. September 97, Lund, Sweden.
61. R. Kersting: "Plasma oscillations: emission and absoption of THz pulses", 10. Sept. 1997, Toshiba Cambridge Research Corporation, Cambridge, UK.
62. E. Gornik, N. Seliger, C. Fürböck, D. Pogany: "Charakterisierung von Halbleiterbauelementen mittlels einer Lasersondentechnik", SIEMENS Villach, 4.4.1997
63. E. Gornik, N. Seliger, C. Fürböck, D. Pogany , P. Habas: "Characterisation of Semiconductor Devices by a Backside-Laserprober Technique", IMEC, Leuven, April 1997
64. D. Pogany, E. Gornik, N. Seliger, C. Fürböck: "Characterisation of Semiconductor Devices by a Backside-Laserprober Technique", CNET (France Telecom), Lyon, April 1997
65. E. Gornik, D. Pogany, N. Seliger, C. Fürböck: "Charakterisierung von Halbleiterbauelementen", Austria Mikro Systeme (AMS), Unterpremstätten, 17.11.1997

1. M. Stoisiek, N. Seliger, E. Gornik, Meßgerät zur Temperaturmessung, Patentanmeldung

1. W. Boxleitner, Bandstruktur und Ballistischer Transport in Halbleiter-Heterostrukturen, TU Wien, 1997
2. C. Eder, Rastertunnelmikroskopie an Halbleiter-Nanostrukturen, TU Wien, 1997
3. A. Golshani, Fabrication of Steerable Single Mode Surface Emitting Laser Diodes Based on Surface Mode Emission, TU Wien, 1997

1. G. Hobler, Physikalische Modellierung der Ionenimplantation in Silizium
2. A. Köck, Development of New Single Mode Surface Emitting Laser Diodes
3. J. Smoliner, Current transport in Nanostructures

1. Universität Graz, Institut für Experimentalphysik, Prof. F. Aussenegg
2. Universität Innsbruck, Inst. F. Experimentalphysik, Mag. Fischler, N. Hecker
3. Universität Linz, Prof. M. Helm
4. Siemens AG Villach/München: Dr. Prybil, Dr. Stecher, Dr. Kerber, Dr. Werner, Dr. B. Borchert , Dr. L. Korte, Prof. E. Wolfgang, Dr.M. Stoisiek, Dr. G. Deboy, Dr. G. Sölkner; Dr. S. Görlich
5. Plansee AG, Reutte, Dr. Willhartitz
6. Walter Schottky Institut, TU-München, Dr. W. Wegscheidler, Deutschland
7. Technische Universität Berlin, Dr. A. Wacker, Deutschland,
8. TU München, Lehrstuhl für Techn. Elektrophysik, Prof. G. Wachutka, Deutschland
9. Universität Bremen, Inst. für Festkörperphysik, Prof. Dr. D. Hommel,Deutschland
10. Universität Stuttgart, 4. Physikalisches Institut, Prof. Dr. M.H. Pilkuhn, Deutschland
11. RWTH Aachen, Inst. f. Halbleiterelektronik, Prof. H. Kurz, Deutschland
12. Mütek Infrared Laser Systems, Dr. H. Wachernig, Germany
13. Centre National de la Recherche Scientific, Laboratoire de Microstructures
14. et de Microelectronique, B.Etienne, Cedex, France
15. Thomson-CSF Laboratoire Central de Recherches, Orsay , Dr. Sirtori, Dr. Corbin,France
16. Universite Paris Sud, Prof. F. Julien, France
17. Interuniversity Microelectronics Center (IMEC), Leuven, Belgium
18. Ioffe Physico-Technical Institute, St. Petersburg, Prof. Y. Ivanov, Rußland
19. Norwegian University of Science and Technology, Prof. K. Fossheim, Norwegen
20. Sub-Micron Center, Weizmann Institute, Rehovot, Prof. M. Heiblum, Israel
21. Univ. of California, Lawrence Berkeley Laboratories, Prof. E. E. Haller , USA
22. University of California Santa Barbara, Free-Electron-Laser, Prof. J. Allen, USA
23. University of California Santa Barbara, Materials Department, Prof. A. Gossard, USA
24. Boston College, Dep. of Physics, Boston, Massachusetts, Prof. K.Kempa, USA
25. EPI MBE Components, St. Paul, Minnesota, USA
26. Pontificia Universidade Catolica de Rio de Janeiro, Prof. de Souza, Brazil
27. Herriot Watt University, Edinburgh, Prof. C. Pidgeon, GB
28. Univ. Nottingham, Prof. M. Chamberlain, GB
29. INFM-SNS Pisa, Prof. F. Beltram, Italy
30. Technische Universität Delft, Faculty of Applied Physics, Pof. Wenckebach,NL
31. University Neuchatel, Prof. J. Faist, Swiss
32. Orbisphere Semiconductor Lasers, Swiss
33. Department of Physics, Slovak Academy of sciences, Dr. Thurzo (Slovakia)
34. Department of Microelectronics, Faculty of electrical engineering and information technology STU, Prof. Csabay (Slovakia)
35. Institute National des Sciences Appliques de Lyon, Villeurbanne, France
36. Institute of Electrical Engineering, Slovak Academy of Sciences,
37. Bratislava, Slovakia

TU Wien:

Institut für Angewandte u. Technische Physik

Prof. Ebel (AlGaAs layers)

Doz. Schattschneider (GaAs on SiO₂)

Doz. Pongratz (Heterostruktures, metallic superlattices)

Atominstitut der österreichischen Universitäten

Prof. Harald Weber

Institut für Analytische Chemie

Prof. Robert Kellner

Universität Wien:

Institut für Physikalische Chemie

Prof. Kauffmann (LTGaAs for high-speed spektroskopy)

Universität Innsbruck:

Institut für Experimentalphysik

Doz. Seidenbusch (Heterostruktures, detectors)

Universität Linz:

Institut für Halbleiterphysik

Prof. Günter Bauer

Doz. Manfred Helm

Universität Leoben

Institut für Physik

Prof. Kuchar (Heterostruktures, 2DEGs)

University of Surrey, UK

Physics Department

Dr. B.N.Murdin

Herriot Watt University, Edinburgh, UK

Prof. C. Pidgeon

Academy of Sciences, Poland

High Pressure Research Center

Prof. Treciakowski (QWs) und Prof. Suski (QW, 2DEGs)

Academy of Sciences, Slowakei

Institut of Physics

Dr. Bartos (DLTS, CV)

Technische Universität Bratislava, Slowakei

Mikroelektronik

Prof. Csabay

Boston College, Boston, Massachusetts, USA

Dep. of Physics

Prof. K.Kempa. Prof. P. Bakshi (FIR emitter)

Prof. D. Broido (SLs)

Georgia State University

Prof. U. Perera (FIR Detectors)